{"created":"2023-06-20T16:50:46.748418+00:00","id":23339,"links":{},"metadata":{"_buckets":{"deposit":"62a9646c-434c-424b-988f-8bbdb88098fc"},"_deposit":{"created_by":3,"id":"23339","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"23339"},"status":"published"},"_oai":{"id":"oai:kindai.repo.nii.ac.jp:00023339","sets":["14:2667:4819"]},"author_link":["43423"],"control_number":"23339","item_8_biblio_info_21":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographic_titles":[{"bibliographic_title":"科学研究費助成事業研究成果報告書 (2021)"}]}]},"item_8_description_25":{"attribute_name":"リンクURL","attribute_value_mlt":[{"subitem_description":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18K13804/","subitem_description_type":"Other"}]},"item_8_description_33":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"研究成果の概要（和文）：本研究ではダイヤモンドと絶縁膜界面状態の改質に着目し，絶縁膜成膜条件によるトランジスタ素子の界面欠陥状態への影響を調査した．絶縁膜となる酸化アルミニウム薄膜は原子層堆積法を用いて成膜し，原料ガスにはトリメチルアルミニウム（ＴＭＡ），ヂメチルアルミニウムハイドライト（ＤＭＡＨ）を用いた．ＤＭＡＨはＴＭＡに比べてメチル基の代わりに水素が結合して構成される．これら2種類の絶縁膜による界面状態変化を調べるため，金属/絶縁膜/水素終端ダイヤモンド/金属構造のキャパシタを作製し，静電容量-電圧特性からHigh-low法を用いて界面欠陥準位密度を算出した結果，ＤＭＡＨの場合に欠陥密度が減少する事がわかった．\n研究成果の概要（英文）： In this study, we focused on the modification of the interface state between diamond and insulating film, and investigated the effect of insulating film deposition conditions on the interface defect state of transistor devices. Aluminum oxide thin films were deposited as insulating films by atomic layer deposition, using trimethylaluminum (TMA) and dimethylaluminum hydride (DMAH) as raw material gases as the source gas. Compared to TMA, DMAH is composed of hydrogen bonded instead of methyl groups. To investigate the change in interfacial state between these two insulating films, capacitors with metal/insulating film/hydrogen-terminated diamond/metal structures were fabricated, and the capacitance-voltage characteristics were used to calculate the density of interfacial defect levels using the high-low method. The results show that the defect density decreases in the case of DMAH.","subitem_description_type":"Abstract"}]},"item_8_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究種目：若手研究; 研究期間：2018～2021; 課題番号：18K13804; 研究分野：半導体素子; 科研費の分化・細目：","subitem_description_type":"Other"}]},"item_8_description_37":{"attribute_name":"資源タイプ(WEKO2)","attribute_value_mlt":[{"subitem_description":"Research Paper","subitem_description_type":"Other"}]},"item_8_description_41":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_publisher_14":{"attribute_name":"出版者 名前","attribute_value_mlt":[{"subitem_publisher":"近畿大学"}]},"item_8_text_10":{"attribute_name":"著者 役割","attribute_value_mlt":[{"subitem_text_value":"研究代表者"}]},"item_8_text_7":{"attribute_name":"著者(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Fujii, Mami"}]},"item_8_text_8":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"近畿大学理工学部; 准教授"}]},"item_8_text_9":{"attribute_name":"著者所属(翻訳)","attribute_value_mlt":[{"subitem_text_value":"Kindai University"}]},"item_8_version_type_12":{"attribute_name":"版","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_be7fb7dd8ff6fe43","subitem_version_type":"NA"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"藤井, 茉美"},{"creatorName":"フジイ, マミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"43423","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"30731913","nameIdentifierScheme":"NRID","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/search/?kw=30731913"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-12-05"}],"displaytype":"detail","filename":"18K13804seika.pdf","filesize":[{"value":"638.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"18K13804seika.pdf","url":"https://kindai.repo.nii.ac.jp/record/23339/files/18K13804seika.pdf"},"version_id":"7790db14-cdd5-40ec-9468-1dc356024697"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ダイヤモンド","subitem_subject_scheme":"Other"},{"subitem_subject":"界面","subitem_subject_scheme":"Other"},{"subitem_subject":"欠陥","subitem_subject_scheme":"Other"},{"subitem_subject":"トランジスタ","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"水素含有酸化アルミニウム薄膜による水素終端ダイヤモンドMOSFETの高耐圧化","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"水素含有酸化アルミニウム薄膜による水素終端ダイヤモンドMOSFETの高耐圧化","subitem_title_language":"ja"},{"subitem_title":"Hydrogen Terminated Diamond MOSFETs by Hydrogen Containing Aluminum Oxide Thin Film","subitem_title_language":"en"}]},"item_type_id":"8","owner":"3","path":["4819"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-12-05"},"publish_date":"2022-12-05","publish_status":"0","recid":"23339","relation_version_is_last":true,"title":["水素含有酸化アルミニウム薄膜による水素終端ダイヤモンドMOSFETの高耐圧化"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-08-02T06:36:30.852715+00:00"}