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三次元構造Bulk 形FinFET の特性評価
https://kindai.repo.nii.ac.jp/records/18191
https://kindai.repo.nii.ac.jp/records/18191ce8b8215-1b19-4687-84a1-4280070ecefb
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
AA12315376-20160315-0031.pdf (320.1 kB)
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| Item type | ☆紀要論文 / Departmental Bulletin Paper(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2016-11-08 | |||||||||
| タイトル | ||||||||||
| タイトル | 三次元構造Bulk 形FinFET の特性評価 | |||||||||
| タイトル | ||||||||||
| タイトル | Characteristics Evaluation of 3-Dimensional Bulk-type FinFET | |||||||||
| 言語 | en | |||||||||
| 著者 |
嶋野, 彰夫
× 嶋野, 彰夫
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| 言語 | ||||||||||
| 言語 | jpn | |||||||||
| キーワード | ||||||||||
| 主題 | Semiconductor, 3-dimension, FinFET, MOS Field Effect Transistor, Integration Circuit | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | departmental bulletin paper | |||||||||
| 著者(英) | ||||||||||
| 言語 | en | |||||||||
| 値 | SHIMANO, Akio | |||||||||
| 著者 所属 | ||||||||||
| 値 | 近畿大学工業高等専門学校総合システム工学科電気電子コース | |||||||||
| 著者所属(翻訳) | ||||||||||
| 値 | Kindai University Technical College | |||||||||
| 版 | ||||||||||
| 出版タイプ | NA | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_be7fb7dd8ff6fe43 | |||||||||
| 出版者 名前 | ||||||||||
| 出版者 | 近畿大学工業高等専門学校 | |||||||||
| 書誌情報 |
近畿大学工業高等専門学校研究紀要 en : Research reports Kindai University Technical College 号 9, p. 31-34, 発行日 2016-03-15 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 18824374 | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | The production of new Large Scaled Integrated Circuit has been started using 3-dimensional FinFET. FinFET has been proposed and studied for long time in Fin-shaped Si layer using SOI substrate. But, the structure of new production adopted is Bulk-type FinFET because of lower wafer-process production cost. The electrical characteristics of Bulk-type FinFET have not been disclosed in detail. This paper describes the results of electrical characteristics comparison between SOI-type and Bulk-type FinFET’s, especially concerning to short-channel Effect. No significant differences in Threshold Voltage lowering against channel length and Sub-threshold Swing characteristics have been observed except a little smaller Threshold Voltage of Bulk-type FinFET. Fin width dependence of Threshold Voltage lowering and Sub-threshold Swing were observed to be similar to channel length dependence. The analyzed result of potential distribution in the direction of depth at the center of the upper channel showed Fin Si layer sandwiched between SiO2 are fully depleted and plays the same role as buried oxide in SOI. It is concluded that Bulk-type FinFET can be used for low-cost LSI’s with the almost same electrical characteristics as SOI-type FinFET. | |||||||||
| フォーマット | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | application/pdf | |||||||||
